Advanced Compact MOSFET (ACM) models

The ACM models are charge-based MOSFET models for the design and simulation of analog, mixed-signal and RF circuits. Currents, charges, transconductances and capacitances are single-piece expressions valid in all regions of operation, from weak to strong inversion, and the models preserve the source-drain symmetry of the transistor. Each model is one Verilog-A module for NMOS and PMOS.

ACM2 2.0.0

Five DC parameters: vt0, ish, n, sigma, zeta. Constant slope factor.

Equations and characteristics · Verilog-A source · Parameter extraction (Colab)

ACM3 3.0.0

Eight DC parameters: vt0, ish, phi, gamma, theta, sigma_wi, sigma_si, zeta. Gate-dependent slope factor, mobility reduction, gate-dependent DIBL.

Equations and characteristics · Verilog-A source · Parameter extraction (Colab)

Repository: ACMmodel/ACM-MOSFET-models: models, IHP SG13G2 cards (cards/ihp_sg13g2), ngspice examples (examples/ngspice) and the parameter tables of both models.